AO4452 100v n-channel mosfet sdmos tm general description p roduct summary v ds i d (at v gs =10v) 8 a r ds(on) (at v gs =10v) < 25m w r ds(on) (at v gs = 7v) < 31m w 100% uis tested 100% r g tested t he AO4452 is fabricated with sdmos tm trench t echnology that combines excellent r ds(on) with low gate c harge.the result is outstanding efficiency with controlled switching behavior. this universal technology is well suited for pwm, load switching and general purpose applications. 100v d soic-8 t op view bottom view d d d d symbol v ds v gs i dm i ar e ar t j , t stg symbol t 10s steady-state steady-state r q j l 2 t a =70c j unction and storage temperature range -55 to 150 c thermal characteristics w 3.1 units parameter typ max c/w r q j a 31 5 9 40 maximum junction-to-ambient a v 25 gate-source voltage drain-source voltage 100 v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted mj avalanche current c 39 a 2 8 a i d 8 6 .5 57 t a =25c t a =70c p ower dissipation b p d repetitive avalanche energy l=0.1mh c pulsed drain current c continuous drain c urrent t a =25c m aximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 g s s s s g rev 3: may 2012 www.aosmd.com page 1 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4452 symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 10 t j =55c 50 i gss 100 na v gs(th) gate threshold voltage 2 3.2 4 v i d(on) 60 a 20.5 25 t j =125c 36 43 25 31 m w g fs 23 s v sd 0.66 1 v i s 5 a c iss 1400 1770 2200 pf c oss 115 165 215 pf c rss 33 55 80 pf r g 0.3 0.65 1.0 w forward transconductance diode forward voltage v gs =0v, v ds =50v, f=1mhz dynamic parameters reverse transfer capacitance m a v ds =v gs i d =250 m a v ds =0v, v gs = 25v zero gate voltage drain current gate-body leakage current m w maximum body-diode continuous current input capacitance v gs =10v, i d =8a r ds(on) static drain-source on-resistance i dss gate resistance v gs =0v, v ds =0v, f=1mhz output capacitance i s =1a,v gs =0v v ds =5v, i d =8a v gs =7v, i d =6.5a switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v q g (10v) 14 28 42 nc q gs 4 9 14 nc q gd 6 10 14 nc t d(on) 12 ns t r 4 ns t d(off) 17 ns t f 5 ns t rr 11 16 21 ns q rr 42 60 78 nc t rr 21 27 33 ns q rr 20 28 36 nc components in life support devices or systems are not authorized. aos does not assume any liability arising o ut of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =8a, di/dt=100a/ m s body diode reverse recovery charge i f =8a, di/dt=500a/ m s turn-on delaytime v gs =10v, v ds =50v, r l =6 w , r gen =3 w i f =8a, di/dt=500a/ m s body diode reverse recovery time i f =8a, di/dt=100a/ m s total gate charge v gs =10v, v ds =50v, i d =8a gate source charge gate drain charge turn-off delaytime turn-on rise time turn-off fall time switching parameters body diode reverse recovery time a. the value of r q ja i s measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev 3: may 2012 www.aosmd.com page 2 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4452 typical electrical and thermal characteristics 17 5 2 10 0 1 0 20 30 40 50 60 3 4 5 6 7 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 20 25 3 0 35 40 r ds(on) (m w w w w ) 1 . 2 1.4 1 .6 1.8 2 2.2 normalized on -resistance v g s =10v i d =8a 25 c 125 c v ds =5v v g s =7v v g s =10v 0 1 0 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =6v 8 v 7v 10v 6.5v 10 0 18 40 10 1 5 20 0 6 12 18 24 30 i d (a ) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1 .0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1 . 2 0 25 50 75 100 125 150 175 normalized on temperature (c) f igure 4: on-resistance vs. junction temperature (note e) v g s =7v i d =6.5a 15 2 0 25 30 35 40 45 6 7 8 9 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d = 8a 25 c 125 c rev 3: may 2012 www.aosmd.com page 3 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4452 typical electrical and thermal characteristics 0 2 4 6 8 1 0 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 5 00 1000 1500 2000 2500 0 20 40 60 80 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss v d s =50v i d =8a 100 (a) peak avalanche current t a = 25 c t = 150 c t a = 100 c 1.0 1 0.0 100.0 i d (amps) 10 m s 1 ms r d s(on) limited 100 m s 10 0 .000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s ) figure 9: single pulse avalanche capability (note c) t a = 150 c t a =125 c 1 1 0 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to-ambient (note f) t a = 25 c 0.0 0 .1 0.01 0.1 1 10 100 v ds (volts) fi gure 10: maximum forward biased safe operating area (note f) 10 s dc t j (max) =150 c t a =25 c 10ms rev 3: may 2012 www.aosmd.com page 4 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4452 typical electrical and thermal characteristics 0.001 0 .01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal impedance (note f) single pulse d=t o n /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja = 75 c/w 6 9 1 2 15 150 200 250 300 i rm (a) q rr (nc) di/dt=800a/ m s 125oc 125oc 25oc i r m 0.8 1 .2 1.6 2 8 12 1 6 20 24 s t rr (ns) di/dt=800a/ m s 125oc 25 oc t r r 40 0 3 5 0 100 0 5 10 15 20 25 30 i s (a) figure 13: diode reverse recovery charge and peak current vs. conduction current 25 oc q r r -2 2 6 1 0 14 18 22 26 30 0 30 60 90 120 150 0 200 400 600 800 1000 i rm (a) q rr (nc) di/dt (a/ m mm m s) figure 15: diode reverse recovery charge and peak current vs. di/dt 125oc 125oc 25oc 25oc i s = 20a q rr i r m 0 0 .4 0 4 8 0 5 10 15 20 25 30 i s (a ) figure 14: diode reverse recovery time and softness factor vs. conduction current 125 oc 25 oc s 0 1 2 3 0 5 1 0 15 20 25 30 0 200 400 600 800 1000 s t rr (ns) di/dt (a/ m mm m s) figure 16: diode reverse recovery time and softness factor vs. di/dt 125oc 25oc 125oc i s = 20a t r r s 25oc rev 3: may 2012 www.aosmd.com page 5 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4452 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms vgs vgs t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f a r dss 2 e = 1/2 li di/dt i rm r r vdd v dd q = - idt ar a r t rr rev 3: may 2012 w ww.aosmd.com page 6 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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